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New ASFETs Affords Enhanced SOA Efficiency

These new Utility Particular MOSFETs provide enhanced security in opposition to in-rush currents and can be utilized for hot-swap purposes.

Credit score : Nexperia

Sizzling-swaps shield the primary bus of the machine from in-rush currents. These in-rush currents usually create reliability challenges for hot-swap purposes. Nexperia has launched hotswap utility particular MOSFETs (ASFETs) with enhanced Smooth Working Space (SOA). The brand new units mix industry-leading enhanced SOA efficiency with extraordinarily low RDS(on), and can be utilized in 12 V hotswap purposes together with information middle servers and communications tools.

Nexperia has developed PSMNR67-30YLE ASFET, totally optimized for hot-swap and tender begin purposes. The machine delivers 2.2x stronger SOA (12 V @100 mS) than earlier applied sciences whereas having an RDS(on) (max) as little as 0.7 mΩ. The Spirito impact (represented by the steeper downward slope discovered on SOA curves at increased voltages) has been eradicated, whereas distinctive efficiency is maintained throughout the complete voltage and temperature vary (in comparison with unoptimized units).

The machine is characterised at 125 °C and gives sizzling SOA datasheet curves due to this fact supporting designers by eradicating thermally de-rate design. Nexperia has launched 8 new units (three 25 V and 5 30 V). These units can be found in a alternative of LFPAK56 & LFPAK56E packages with RDS(on) starting from 0.7 mΩ to 2 mΩ, the vast majority of hotswap and tender begin purposes are addressed. Two extra 25 V merchandise (which can have an excellent decrease RDS(on) of 0.5 mΩ) are deliberate for launch over the approaching months.



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